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The two dimensional (2D) plasmon propagation in the channel of a high electron mobility transistor (HEMT) is numerically modeled using the full wave technique. To analyze the proposed structure, the Maxwell’s equations are solved inconjuction to the hydrodynamic transport equations, using the finite difference time domain (FDTD) method. The properties of the 2D plasmons propagation along the channel are investigated by applying different bias voltages to the drain and the gate terminals. The obtained results show that the wavelengths and the propagation constants of the 2D plasmons are considerably affected by varying the bias voltages. Moreover, the proposed full wave model is employed to investigate the tunability of a grating gate HEMT detector over terahertz (THz) frequencies.  Our studies demonstrate that it is possible to control the characteristics of the 2D plasmon propagation along the channel of HEMT devices to produce various types of reconfigurable structures used for THz applications.

Keywords: 2DEG channel, 2D plasmon, full wave model, hydrodynamic equations, HEMT structure, resonant detector

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